The advantages of silicon carbide (SiC) semiconductors are clear. SiC is superior to silicon in terms of high temperature stability, high voltage, high power characteristics and minimal losses.
Currently, SiC substrates are primarily available in 4-inch and 6-inch sizes, but work is underway on 8-inch and 12-inch substrates.
E&R works with global industry leaders and suppliers to offer key SiC integration solutions:
1. laser annealing. Ultra-short wavelength laser for precise and uniform shallow annealing.
2. wafer identification labeling. Ultraviolet laser with a wavelength of 355 nm. Works on 6-, 8-, and 12-inch wafers from both top and back sides.
3. slices plates into cubes and grooves. Pico second and Femto second laser technology for cutting and grooving.
4. Raman spectroscopy. The technology allows to evaluate and correct the process parameters, increasing the productivity of the process.
5. Plasma treatment. Cleaning of wafers before bonding and molding.
E&R will be exhibiting at Semicon Europa in Munich, Germany from November 14-17, 2023. Visit booth # B2378.
E&R works with global industry leaders and suppliers to offer key SiC integration solutions:
1. laser annealing. Ultra-short wavelength laser for precise and uniform shallow annealing.
2. wafer identification labeling. Ultraviolet laser with a wavelength of 355 nm. Works on 6-, 8-, and 12-inch wafers from both top and back sides.
3. slices plates into cubes and grooves. Pico second and Femto second laser technology for cutting and grooving.
4. Raman spectroscopy. The technology allows to evaluate and correct the process parameters, increasing the productivity of the process.
5. Plasma treatment. Cleaning of wafers before bonding and molding.
E&R will be exhibiting at Semicon Europa in Munich, Germany from November 14-17, 2023. Visit booth # B2378.